丝印：L4；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA) ● High Voltage:VCEO=50V APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor ● Audio frequency general purpose amplifier.

文件：203.59 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L4；Package：SOT-323；NPN Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain: hFE=200TYP. ● High voltage: VCEO=50V. ● Power dissipation.(PC=200mW) APPLICATIONS ● Audio frequency general purpose amplifier.

文件：193.08 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：L4；Package：SOD-123S；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：90.96 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOD-123ST；1A Surface Mount Schottky Barrier Rectifiers

■ Features • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Suffix G indicates Halogen-f

文件：91.99 Kbytes 页数：3 Pages

CITC

竹懋科技

丝印：L4；Package：SOT-23；Multiple Terminals SMD Schottky Diodes

Features • Low Turn-on Voltage • Fast Switching • High Conductance • Electrically Identical to Standard JEDEC • RoHS Compliant

文件：191.71 Kbytes 页数：6 Pages

TAITRON

丝印：L4；Package：SOT-23；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

文件：36.63 Kbytes 页数：3 Pages

WTE

Won-Top Electronics

丝印：L4；Package：SOT-23；Small Signal Schottky Diodes, Single Dual

FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available • Base P/N-E3 - RoHS-compliant, commercial grade • Base P/N-HE3 - Ro

文件：115.79 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：L4；Package：SOT-23；Schottky Diode, 0.2 A

DESCRIPTION This Schottky barrier diode is designed for high speed switching applications, voltage clamping and circuit protection. Miniature surface mount packages with reduced foot print are excellent for portable applications where space is limited. FEATURES • Small foot print, surface mount

文件：78.54 Kbytes 页数：5 Pages

VishayVishay Siliconix

威世威世科技公司

丝印：L4；Package：SOT-523；Schottky Diodes

Features ● Low forward voltage ● Guard ring protected ● Small plastic SMD package.

文件：518.95 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：L4；Package：SOT-323；SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Turn-on Voltage ● Fast Switching ● PN Junction Guard Ring for Transient and ESD Protection ● Designed for Surface Mount Application ● Plastic Material – UL Recognition Flammability Classification 94V-O

文件：37.48 Kbytes 页数：3 Pages

WTE

Won-Top Electronics