AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

FEATURES • High DC Current Gain: hFE = 200 TYP. (VCE = 6.0 V, IC = 1.0 mA) • High Voltage: VCEO = 50 V

文件：60.97 Kbytes 页数：6 Pages

NEC

瑞萨

AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON TRANSISTOR MINI MOLD

DESCRIPTION The UTC 2SC1623is a NPN silicon transistor using UTC’s advanced technology to provide customers with high DC current gain and high breakdown voltage. The UTC 2SC1623is usually used in audio frequency general purpose amplifier. FEATURES * High breakdown Voltage * High DC Current Gai

文件：120.29 Kbytes 页数：2 Pages

UTC

友顺

NPN Silicon Epitaxial Transistors

Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant (P Suffix Designates RoHS Compliant. See Ordering Information)

文件：62.62 Kbytes 页数：1 Pages

MCC

NPN Silicon Transistor

Features ● High DC Current Gain: hFE = 200 TYP. VCE = 6.0 V, IC = 1.0 mA ● High Voltage: VCE O = 50 V

文件：146.52 Kbytes 页数：4 Pages

KEXIN

科信电子

NPN Epitaxial Planar Transistor

DESCRIPTION The 2SC1623 is designed for use driver stage ofAF amplifier and general purpose application.

文件：148.97 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：L4/L5/L6/L7；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● High DC current gain:hFE=200TYP (VCE=6.0V,IC=1.0mA). ● High Voltage:VCEO=50V. APPLICATIONS ● NPN Silicon Epitaxial Planar Transistor. ● Audio frequency general purpose amplifier.

文件：1.0753 Mbytes 页数：2 Pages

LUGUANG

鲁光电子

SOT-323 Plastic-Encapsulate Transistors

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：1.46926 Mbytes 页数：3 Pages

DGNJDZ

南晶电子

TRANSISTOR (NPN)

FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：136.53 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

High DC current gain hFE 200(Typ)VCE 6V, IC 1mA

FEATURES High DC current gain :hFE=200(Typ)VCE=6V, IC=1mA High voltage:VCEO=50V

文件：107.26 Kbytes 页数：2 Pages

MAKOSEMI

美科半导体

Silicon NPN transistor in a SOT-23 Plastic Package

Descriptions Silicon NPN transistor in a SOT-23 Plastic Package. Features High hFE and VCEO, complementary pair with 2SA812. Applications Audio frequency general amplifier application.

文件：1.545 Mbytes 页数：6 Pages

FOSHAN

蓝箭电子