Silicon PNP Power Transistors

DESCRIPTION • With TO-220C package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

文件：88.92 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High DC current gain • DARLINGTON APPLICATIONS • For medium speed and power switching applications

文件：119.24 Kbytes 页数：3 Pages

SAVANTIC

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V; IC= -5A) APPLICATIONS • Designed for power amplifier applications.

文件：242.62 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C7；Package：TO-220FP；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -8OV(Min) • High DC Current Gain- • Built-in resistor between base and emitter • Built-in damper diode APPLICATIONS • Designed for power amplifier applications.

文件：129.55 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High foward current transfer ratio hFE ● Satisfactory linearity of foward current transfer ratio hFE ● Allowing automatic insertion with radial taping

文件：52.74 Kbytes 页数：3 Pages

PANASONIC

松下

Silicon PNP epitaxial planar type(For power amplification)

Silicon PNP epitaxial planar type For power amplification ■ Features ● High forward current transfer ratio hFE which has satisfactory linearity ● Allowing automatic insertion with radial taping

文件：54.62 Kbytes 页数：3 Pages

PANASONIC

松下

TRANSISTOR (POWER AMPLIFIER APPLICATIONS)

POWER AMPLIFIER APPLICATIONS • High Breakdown Voltage : VCEO = -140V (Min) • Complementary to 2SD2384

文件：138.37 Kbytes 页数：2 Pages

TOSHIBA

东芝

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) ·High DC Current Gain- : hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 APPLICATIONS ·Designed for power amplifier applications

文件：245.53 Kbytes 页数：2 Pages

ISC

无锡固电

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -140V(Min) • High DC Current Gain- : hFE= 5000(Min)@IC= -7A • Complement to Type 2SD2385 APPLICATIONS • Designed for power amplifier applications

文件：245.53 Kbytes 页数：2 Pages

ISC

无锡固电