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2SB1502	文件：70.34 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type Darlington SiliconPNPepitaxialplanartypeDarlington Forpoweramplification Complementaryto2SD2275 ■Features ●Optimumfor55WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat):	PanasonicPanasonic Corporation 松下松下电器	Panasonic
2SB1502	文件：79.17 Kbytes Page：2 Pages	Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=5000(Min)@lc=-4A •Low-CollectorSaturationVoltage- :VCE(satr-2.5V(Max.)@lc=-4A •ComplementtoType2SD2275 APPLICATIONS •Designedforpoweramplifierapplications •Optimumfor55WHiFioutputapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2SB1502	文件：268.65 Kbytes Page：2 Pages	isc Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=5000(Min)@IC=-4A •Low-CollectorSaturationVoltage- :VCE(sat)=-2.5V(Max.)@IC=-4A •ComplementtoType2SD2275 •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SB1503	文件：70.96 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type Darlington(For power amplification) Forpoweramplification Complementaryto2SD2276 ■Features ●Optimumfor110WHiFioutput ●HighfowardcurrenttransferratiohFE:5000to30000 ●LowcollectortoemittersaturationvoltageVCE(sat):	PanasonicPanasonic Corporation 松下松下电器	Panasonic
2SB1503	文件：249.41 Kbytes Page：2 Pages	isc Silicon PNP Darlington Power Transistor DESCRIPTION ·HighDCCurrentGain- :hFE=5000(Min)@IC=-7A ·Low-CollectorSaturationVoltage- :VCE(sat)=-2.5V(Max.)@IC=-7A ·ComplementtoType2SD2276 APPLICATIONS ·Designedforpoweramplifierapplications ·Optimumfor110WHiFioutputapplications.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SB1503	文件：114.04 Kbytes Page：3 Pages	Silicon PNP Power Transistors DESCRIPTION ·WithTO-3PLpackage ·Complementtotype2SD2276 ·HighDCcurrentgain ·Lowcollectorsaturationvoltage ·DARLINGTON APPLICATIONS ·Forpoweramplification ·Optimumfor110WHi-Fioutputapplications	SAVANTIC Savantic, Inc.	SAVANTIC
2SB1503	文件：78.81 Kbytes Page：2 Pages	Silicon PNP Darlington Power Transistor DESCRIPTION •HighDCCurrentGain- :hFE=5000(Min)@lc=-7A •Low-CollectorSaturationVoltage- :VcE•ComplementtoType2SD2276 •ComplementtoType2SD2276 APPLICATIONS •Designedforpoweramplifierapplications •Optimumfor11OWHiFioutputapplications.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2SB1504	文件：90.4 Kbytes Page：3 Pages	Silicon PNP epitaxial planar type darlington SiliconPNPepitaxialplanartypedarlington Forpowerswitching •HighforwardcurrenttransferratiohFE •High-speedswitching •Allowingautomaticinsertionwithradialtaping	PanasonicPanasonic Corporation 松下松下电器	Panasonic
2SB1507	文件：102.2 Kbytes Page：3 Pages	High-Current Switching Applications 50V/7AHigh-CurrentSwitchingApplications Features •Lowcollector-to-emittersaturationvoltage:VCE(sat)=(–)0.4Vmax. •WideASOandhighlyregistanttobreakdown. •Micalesspackagefacilitatingeasymounting. Applications •Relaydrivers,high-speedinverters,converters.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SB1507	文件：162.74 Kbytes Page：3 Pages	Silicon PNP Power Transistors DESCRIPTION •WithTO-3PMLpackage •Lowcollectorsaturationvoltage •Complementtotype2SD2280 •Wideareaofsafeoperation APPLICATIONS •Foruseinrelaydrivers,high-speedInverters,converters	SAVANTIC Savantic, Inc.	SAVANTIC
2SB1507	文件：259.43 Kbytes Page：2 Pages	isc Silicon PNP Power Transistor DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=-0.4(V)(Max)@IC=-4A •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD2280 APPLICATIONS •Designedforrelaydrivers,high-speedinverters,converters.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SB1507	文件：77.48 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION •LowCollectorSaturationVoltage:VCE(sat)=-0.4(V)(Max)@IC=-4A •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD2280 APPLICATIONS •Designedforrelaydrivers,high-speedinverters,converters.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2SB1508	文件：210.48 Kbytes Page：4 Pages	Silicon PNP Power Transistors DESCRIPTION •WithTO-3PMLpackage •Lowcollectorsaturationvoltage •Complementtotype2SD2281 •Wideareaofsafeoperation APPLICATIONS •Foruseinrelaydrivers,high-speedInverters,converters	SAVANTIC Savantic, Inc.	SAVANTIC
2SB1508	文件：215.29 Kbytes Page：4 Pages	Silicon PNP Power Transistors DESCRIPTION •WithTO-3PMLpackage •Lowcollectorsaturationvoltage •Complementtotype2SD2281 •Wideareaofsafeoperation APPLICATIONS •Foruseinrelaydrivers,high-speedInverters,converters	JMNICQuanzhou Jinmei Electronic Co.,Ltd. 泉州锦美泉州锦美电子有限公司	JMNIC
2SB1508	文件：183.69 Kbytes Page：4 Pages	Silicon PNP Power Transistors DESCRIPTION •WithTO-3PMLpackage •Lowcollectorsaturationvoltage •Complementtotype2SD2281 •Wideareaofsafeoperation APPLICATIONS •Foruseinrelaydrivers,high-speedInverters,converters	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SB1508	文件：103.93 Kbytes Page：3 Pages	High-Current Switching Applications Features •Lowcollector-to-emittersaturationvoltage: VCE(sat)=–0.5V(PNP),0.4V(NPN)max. •WideASOandhighlyregistanttobreakdown. •Micalesspackagefacilitatingeasymounting. Applications •Relaydrivers,high-speedinverters,converters.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SB1508	文件：139.97 Kbytes Page：2 Pages	Silicon PNP Power Transistor DESCRIPTION •LowCollectorSaturationVoltageVCE(sat)=-05(V){Max)@lc=-6A •GoodLinearityofhFE •WideAreaofSafeOperation •ComplementtoType2SD2281 APPLICATIONS •Designedforrelaydrivers,high-speedinverters,converters.	NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司	NJSEMI
2SB1509	文件：114.15 Kbytes Page：3 Pages	High-Current Switching Applications Features ·Lowcollector-to-emittersaturationvoltage: VCE(sat)=–0.5Vmax. ·WideASOandhighlyregistanttobreakdown. ·Micalesspackagefacilitatingeasymounting. Applications ·Relaydrivers,high-speedinverters,converters.	SANYOSanyo 三洋三洋电机株式会社	SANYO
2SB1509	文件：162.85 Kbytes Page：3 Pages	Silicon PNP Power Transistors DESCRIPTION ·WithTO-3PMLpackage ·Lowcollectorsaturationvoltage ·Complementtotype2SD2282 ·Wideareaofsafeoperation APPLICATIONS ·Foruseinrelaydrivers,high-speedInverters,converters	SAVANTIC Savantic, Inc.	SAVANTIC
2SB1509	文件：259.44 Kbytes Page：2 Pages	isc Silicon PNP Power Transistor DESCRIPTION ·LowCollectorSaturationVoltage :VCE(sat)=-0.5(V)(Max)@IC=-8A ·GoodLinearityofhFE ·WideAreaofSafeOperation ·ComplementtoType2SD2282 APPLICATIONS ·Designedforrelaydrivers,high-speedinverters,converters.	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC

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晶体管资料

型号：
2SB1502
别名：
三极管、晶体管、晶体三极管
生产厂家：
制作材料：
Si-P+Darl
性质：
功率放大（L）
封装形式：
直插封装
极限工作电压：
120V
最大电流允许值：
5A
最大工作频率：
20MHZ
引脚数：
3
可代换的型号：
2SB1492,2SB1555,2SB1556,
最大耗散功率：
60W
放大倍数：
β>5000
图片代号：
B-44
vtest：
120
htest：
20000000
atest：
5
wtest：
60

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市特顺芯科技有限公司	2SB1502	HITACHI	08PB		90000		询价
深圳市鹏和科技有限公司	2SB1502	PANASONIC	2022+	TO-3PL	5000	全现原装公司现货	询价
深圳市百视威讯电子科技有限公司	2SB1502		23+	N/A	85700	正品授权货源可靠	询价
深圳市芯祺盛科技有限公司	2SB1502	MAT	1746+	TO3PL	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳鹏芯半导体科技(集团)有限公司	2SB1502	PANASONIC/松下	19+;17+	TO-3PL	62000	全新现货	询价
深圳市汇莱威科技有限公司	2SB1502	PANASONIC/松下		TO-3L	265209	假一罚十原包原标签常备现货!	询价
深圳市威尔健半导体有限公司	2SB1502	PANASONIC/松下	23+	TO-3L	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	2SB1502	PANASONIC/松下	2022	TO-3L	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市河锋鑫科技有限公司	2SB1502	MAT	22+	TO-3PL	6000	十年配单,只做原装	询价
无锡固电半导体股份有限公司	2SB1502	isc	2024	TO-3PL	10000	国产品牌isc,可替代原装	询价

更多2SB15供应商更新时间2024-5-1 10:50:00

晶体管资料

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