Silicon PNP epitaxial planar type Darlington(For power amplification)

For power amplification Complementary to 2SD2276 ■ Features ● Optimum for 110W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

文件：70.96 Kbytes 页数：3 Pages

Panasonic

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110W HiFi output applications.

文件：249.41 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage- : VcE • Complement to Type 2SD2276 • Complement to Type 2SD2276 APPLICATIONS • Designed for power amplifier applications • Optimum for 11OW HiFi output applications.

文件：78.81 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications

文件：114.04 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistors

文件：115.65 Kbytes 页数：3 Pages

SAVANTIC

Power Device - Power Transistors - For Audio

Panasonic

松下