Silicon PNP Power Transistor

DESCRIPTION • Collector-EmitterBreakdownVoltage- : V(BR)CFO=-150V(Min.) • Complement to Type 2SD2337 APPLICATIONS • Designed for low frequency power amplifier color TV vertical deflection output applications.

文件：130.27 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220Fa package • High VCEO • Complement to type 2SD2337 APPLICATIONS • For low frequency power amplifier color TV vertical deflection output applications

文件：121.61 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP epitaxial planer typeFor low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2357 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

文件：35.94 Kbytes 页数：2 Pages

PANASONIC

松下

Silicon PNP Epitaxial Planar Type

Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：49.3 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Epitaxial Planar Type

Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.

文件：49.58 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP epitaxial planer type(For low-frequency amplification)

Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD2359 ■ Features ● Low collector to emitter saturation voltage VCE(sat). ● Large collector power dissipation PC. ● Mini Power type package, allowing downsizing of the equipment and automatic insertion throug

文件：36.2 Kbytes 页数：2 Pages

PANASONIC

松下

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154040ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

文件：18.01 Kbytes 页数：1 Pages

SILAN

士兰微

SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154060ML is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Low power losses, high efficiency; ➤ Guard ring construction for transient protection; ➤ High ESD capability; ➤ High surge capability; ➤ Packaged products are widely use

文件：17.95 Kbytes 页数：1 Pages

SILAN

士兰微

LOW IR SCHOTTKY BARRIER DIODE CHIPS

DESCRIPTION ➤ 2SB154100MA is a schottky barrier diode chips fabricated in silicon epitaxial planar technology; ➤ Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C opera

文件：20.32 Kbytes 页数：1 Pages

SILAN

士兰微

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2374/2374A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications

文件：233.89 Kbytes 页数：4 Pages

SAVANTIC