Silicon PNP epitaxial planar type Darlington

Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2275 ■ Features ● Optimum for 55W HiFi output ● High foward current transfer ratio hFE: 5000 to 30000 ● Low collector to emitter saturation voltage VCE(sat):

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Panasonic

松下

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@IC= -4A • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -4A • Complement to Type 2SD2275 • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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ISC

无锡固电

Silicon PNP Darlington Power Transistor

DESCRIPTION • High DC Current Gain- : hFE= 5000(Min)@lc= -4A • Low-Collector Saturation Voltage- : VCE(satr -2.5V(Max.)@lc= -4A • Complement to Type 2SD2275 APPLICATIONS • Designed for power amplifier applications • Optimum for 55W HiFi output applications.

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Trans Darlington PNP 100V 5A

NJS