POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：48.13 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：C7；Package：TO-220FN；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • High DC current gain • Low collector saturation voltage • Wide area of safe operation • Complement to type 2SD2400

文件：207.85 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -2V, lc= -1A) • Complement to Type 2SD2398 APPLICATIONS • Designed for high power switching applications.

文件：68.64 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

POWER TRANSISTOR

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：48.13 Kbytes 页数：1 Pages

ROHM

罗姆

丝印：C7；Package：TO-220FN；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -150V(Min) • Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A • Complement to Type 2SD2401 • Minimum Lot-to-Lot variations for robust device performance and reliable operatio APPLICATIONS • Designed for audi

文件：268.92 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Epitaxial Planar Transistor(Audio, Series Regulator and General Purpose)

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2401) Application : Audio, Series Regulator and General Purpose

文件：24.99 Kbytes 页数：1 Pages

Sanken

三垦

PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.35 V • Complementary to 2SD2402

文件：41.68 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2402

文件：52.95 Kbytes 页数：2 Pages

KEXIN

科信电子