isc Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min) ·High DC Current Gain-: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS ·Designed for high power switching applications.

文件：237.14 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：C7；Package：TO-220FN；TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION ·With TO-220F package ·Complement to type 2SD2398 ·High DC current gain. ·DARLINGTON APPLICATIONS ·For power amplifier applications

文件：204.67 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage-: V(BR)CEO= -100V(Min) ·High DC Current Gain-: hFE= 1000(Min)@ (VCE= -2V, IC= -1A) ·Complement to Type 2SD2398 APPLICATIONS ·Designed for high power switching applications.

文件：68.61 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2399 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • For power amplifier applications

文件：206.15 Kbytes 页数：3 Pages

SAVANTIC

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1000(Min)@ (VCE= -2V, lc= -1A) • Complement to Type 2SD2398 APPLICATIONS • Designed for high power switching applications

文件：71.18 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：91.07 Kbytes 页数：1 Pages

ROHM

罗姆

Power Transistor (-80V, -4A)

Epitaxial Planar NPN Silicon Transistor TAPED POWER TRANSISTOR PACKAGE FOR USE WITH AN AUTOMATIC PLACEMENT MACHINE)

文件：78.04 Kbytes 页数：4 Pages

ROHM

罗姆

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • Complement to type 2SD2399 • High DC current gain. • Low saturation voltage. • DARLINGTON APPLICATIONS • For power amplifier applications

文件：126.86 Kbytes 页数：3 Pages

ISC

无锡固电

isc Silicon PNP Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) • Complement to Type 2SD2400 APPLICATIONS • Designed for power amplifier applications.

文件：235.41 Kbytes 页数：2 Pages

ISC

无锡固电