PNP SILICON EPITAXIAL TRANSISTOR

FEATURES • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403

文件：43.73 Kbytes 页数：4 Pages

NEC

瑞萨

Silicon PNP Epitaxial Planar

■ Features ● Low collector-emitter saturation voltage ● Complementary to 2SD2403

文件：53.97 Kbytes 页数：2 Pages

KEXIN

科信电子

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.95 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP epitaxial planar type(For low-frequency output amplification)

For low-frequency output amplification ■ Features ● Possible to solder radiation fin directly to printed cicuit boad ● Type with universal characteristics ● Collector breakdown voltage: VCBO/VCEO = –50V ● Collector current: IC = –2A

文件：28.17 Kbytes 页数：1 Pages

Panasonic

松下

Silicon PNP Epitaxial Planar Type

Features Possible to tsolder radiation fin directly to printed circuit boad. Type with universal characteristics. High collector-base voltage (Emitter open) VCBO. High collector-emitter voltage (Base open) VCEO. Large collector current IC.

文件：39.49 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：299 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon PNP Power Transistor

DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·DC Current Gain- : hFE= 120(Min)@ IC= -0.2A ·Fast switching speed ·Large current capacity APPLICATIONS ·Power amplifier applications ·Driver stage amplifier applications

文件：279.95 Kbytes 页数：2 Pages

ISC

无锡固电

PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension and is ideal for DC/DC converters and mortor drivers. FEATURES • New package with dimensions in between those of small signal and power

文件：129.93 Kbytes 页数：6 Pages

NEC

瑞萨

SILICON TRANSISTOR

PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES • New package with dimensions in between those of small signal and power signal package • High current capacitance • Low collector saturation voltage • Complementary transistor with 2SD242

文件：254.89 Kbytes 页数：8 Pages

RENESAS

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