SOT-89-3L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.61084 Mbytes 页数：4 Pages

JIANGSU

长电科技

PNP Silicon Medium Power Transistor

FEATURES Power dissipation PCM : 600 mW Temp.=25°C Collector current ICM : -3 A Collector-base voltage V(BR)CBO : -20 V Operating and storage junction temperature range TJ Tstg: -55°C to +150°C

文件：183.08 Kbytes 页数：2 Pages

SECOS

喜可士

SOT-89-3L Plastic-Encapsulate PNP Transistors

FEATURES ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complement the 2SD2150

文件：1.01929 Mbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：AEQ；Package：SOT-89；Low VCE(sat) Transistor(-20V,-3A)

FEATURES Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Excellent DC current gain characterisitics. Complementary the 2SD2150. APPLICATIONS This device is designed as a general purpose amplifier and switching.

文件：493.57 Kbytes 页数：4 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：109.45 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

文件：132.74 Kbytes 页数：2 Pages

MAKOSEMI

美科半导体

Silicon PNP transistor in a SOT-89 Plastic Package

Descriptions Silicon PNP transistor in a SOT-89 Plastic Package. Features Low VCE(sat),excellent DC current gain characteristics. Applications General purpose amplifier.

文件：781.09 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

PNP Transistors

■ Features ● Excellent DC current gain ● Low collector-emitter saturation voltage ● Complementary to 2SD2150

文件：629.64 Kbytes 页数：3 Pages

YFWDIODE

佑风微

Plastic-Encapsulate Transistors

FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150.

文件：203.17 Kbytes 页数：2 Pages

HOTTECH

合科泰

Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) Collector current ICM: -3 A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：61.39 Kbytes 页数：1 Pages

TEL