Power transistor (-20V, -2A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：61.15 Kbytes 页数：2 Pages

ROHM

罗姆

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：57.46 Kbytes 页数：3 Pages

ROHM

罗姆

PNP Low Vce(sat) Transistor

Voltage 20V Current 3A Features • Silicon PNP epitaxial type • Low Vce(sat) -0.2V(max)@Ic/Ib=-1.6A/-53mA • High collector current capability • Excellent DC current gain characteristics • Lead free in compliance with EU RoHS 2011/65/EU directive. • Green molding compound as per IEC61249

文件：227.55 Kbytes 页数：5 Pages

PANJIT

強茂

PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：313.25 Kbytes 页数：5 Pages

PANJIT

強茂

TRANSISTOR SILICON PNP EPITAXIAL TYPE POWER AMPLIFIER APPLICATION

Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Features • Complementary to 2SD2155 • Recommend for 100W High Fidelity Audio Frequency - Amplifier Output Stage

文件：111 Kbytes 页数：2 Pages

TOSHIBA

东芝

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

文件：224.69 Kbytes 页数：4 Pages

SAVANTIC

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

文件：174.92 Kbytes 页数：4 Pages

ISC

无锡固电

Silicon PNP Power Transistors

DESCRIPTION • With TO-3PL package • Complement to type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage

文件：204.84 Kbytes 页数：4 Pages

JMNIC

锦美电子

Silicon PNP Power Transistor

DESCRIPTION • High Current Capability • High Power Dissipation • Collector-Emitter Breakdown Voltage- : V(BR)CEo=-180V(Min) • Complement to Type 2SD2155 APPLICATIONS • Power amplifier applications • Recommend for 100W high fidelity audio frequency amplifier output stage applications

文件：132.99 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

丝印：B29；Package：SOT-23；PNP Low Vce(sat) Transistor

Features  Silicon PNP epitaxial type  Low Vce(sat) -0.3V(max)@Ic/Ib=-3A/-0.3A  High collector current capability  Excellent DC current gain characteristics  Lead free in compliance with EU RoHS 2011/65/EU directive  Green molding compound as per IEC61249 Std. (Halogen Free)

文件：313.25 Kbytes 页数：5 Pages

PANJIT

強茂