Low VCE(sat) Transistor (??0V, ??A)

Features 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2150 / 2SC4115S. Structure Epitaxial planar type PNP silicon transistor

文件：72.21 Kbytes 页数：4 Pages

ROHM

罗姆

LOW VCE(SAT) TRANSISTOR

LOW VCE(SAT) TRANSISTOR DESCRIPTION As the UTC PNP silicon transistor, the 2SB1424 is the epitaxial planar type transistor which has very low VCE(SAT) (Collector-emitter saturation voltage). FEATURES * Very good DC current gain * Very low VCE(SAT)=-0.2V@ IC/IB=(-2A)/(-0.1A)

文件：150.48 Kbytes 页数：2 Pages

UTC

友顺

PNP Plastic Encapsulated Transistor

FEATURES ● General Purpose Switching and Amplification

文件：83.92 Kbytes 页数：1 Pages

SECOS

喜可士

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

Description Designed for DC-to-DC converter applications.

文件：215.23 Kbytes 页数：1 Pages

DCCOM

道全

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● General Purpose Switching and Amplification

文件：370.55 Kbytes 页数：3 Pages

JIANGSU

长电科技

丝印：B1426；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

文件：1.37742 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Silicon PNP transistor in a TO-92 Plastic Package

Description Silicon PNP transistor in a TO-92 Plastic Package Features Low saturation voltage. Applications For DC-DC conversion.

文件：836.33 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

丝印：B1426；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

FEATURES General Purpose Switching and Amplification

文件：1.37742 Mbytes 页数：4 Pages

DGNJDZ

南晶电子

Power transistor (??0V, ??A)

Features 1) Low saturation voltage, VCE : Max. −0.5V at IC/IB= −1A / −50mA. 2) Excellent DC current gain characteristics.

文件：57.46 Kbytes 页数：3 Pages

ROHM

罗姆

Power Transistor

■ Features ● Low saturation voltage, ● Excellent DC current gain characteristics.

文件：49.34 Kbytes 页数：1 Pages

KEXIN

科信电子