Silicon PNP Epitaxial

Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)

文件：35.4 Kbytes 页数：7 Pages

HITACHIHitachi Semiconductor

日立日立公司

Silicon NPN Triple Diffused Type Transistor

Silicon NPN Triple Diffused Type Transistor

文件：40.29 Kbytes 页数：1 Pages

KEXIN

科信电子

Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv

文件：128.71 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Silicon PNP Power Transistors

DESCRIPTION • With TO-220F package • DARLINGTON • High DC current gain • Low collector saturation voltage APPLICATIONS • Switching applications • Hammer drive ,pulse motor drive applications

文件：217.49 Kbytes 页数：3 Pages

SAVANTIC

TRANSISTOR (SWITCHING, HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS)

Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A)

文件：200.29 Kbytes 页数：4 Pages

TOSHIBA

东芝

isc Silicon PNP Darlington Power Transistor

DESCRIPTION • Collector-Emitter Breakdown Voltage- : V(BR)CEO=-100V(Min) • High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, lc= -1A) • Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max)@ (lc= -1A, IB=-2mA) APPLICATIONS • High power switching applications. • Hammer driv

文件：242.82 Kbytes 页数：2 Pages

ISC

无锡固电

HIGH VOLTAGE SWITCHING TRANSISTOR

■ DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor. ■ FEATURES * Excellent DC current gain characteristics * Low VCE(SAT) VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A)

文件：100.53 Kbytes 页数：5 Pages

UTC

友顺

PNP EPITAXIAL PLANAR TRANSISTOR

Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat)

文件：249.13 Kbytes 页数：4 Pages

WEITRON

丝印：TL；Package：CPT3；Low Frequency Transistor(-20V,-5A)

Features 1) Low VCE(sat). VCE(sat) = -0.35V (Typ.) (IC / IB = -4A / -0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2098 / 2SD2118 / 2SD2097 / 2SD2166.

文件：107.17 Kbytes 页数：5 Pages

ROHM

罗姆

PNP Silicon Low Frequency Transistor

Features 1) Low VCE(sat). 2) Excellent DC current gain characteristics 3) Complements the 2SD2118

文件：209.53 Kbytes 页数：3 Pages

SECOS

喜可士