2SA1971

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=−400V

2SA1971

Silicon PNP Triple Diffused Type

Features Highvoltage:VCE=-400V

2SA1971

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1972

TRANSISTOR (HIGH VOLTAGE SWITCHING APPLICATIONS)

High-VoltageSwitchingApplications •Highbreakdownvoltage:VCEO=−400V

2SA1972

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SA1973

DC/DC Converter Applications

DC/DCConverterApplications Features •AdoptionofFBET,MBITprocesses. •Largecurrentcapacitance. •Lowcollector-to-emittersaturationvoltage. •High-speedswitching. •Ultrasmallpackagefacilitatesminiaturizationinendproducts.

2SA1977

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES •HighfT fT=8.5GHzTYP. •Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=−8V,IC=−20mA •High-speedswitchingcharacterstics •EquivalentNPNtransistoristhe2SC3583.

2SA1977

PNP Epitaxial Silicon Transistor

Features ●HighfT:fT=8.5GHzTYP. ●Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=-8V,IC=-20mA ●High-speedswitchingcharacterstics

2SA1977

PNP EPITAXIAL SILICON TRANSISTOR

FEATURES •HighfT fT=8.5GHzTYP. •Highgain |S21e|2=12.0dBTYP.@f=1.0GHz,VCE=−8V,IC=−20mA •High-speedswitchingcharacterstics •EquivalentNPNtransistoristheNE68133/2SC3583.

2SA1978

PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

FEATURES •HighfT fT=5.5GHzTYP. •|S21e|2=10.0dBTYP.@f=1.0GHz,VCE=−10V,IC=−15mA •Highspeedswitchingcharacteristics •EquivalentNPNtransistoristhe2SC2351. •Alternativeofthe2SA1424.