| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
PNP EPITAXIAL SILICON TRANSISTOR FEATURES • High fT fT = 5.5 GHz TYP. • | S21e | 2 = 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA • High speed switching characteristics • Equivalent NPN transistor is the NE02133 / 2SC2351. • Alternative of the 2SA1424. 文件：1.42336 Mbytes 页数：10 Pages | CEL | CEL | ||
PNP Eitaxial Silicon Transistor Features ● High fT (fT=5.5GHz TYP). ● High gain |S21e|2 =10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA ● High-speed switching characterstics 文件：36.61 Kbytes 页数：1 Pages | KEXIN 科信电子 | KEXIN | ||
PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342 文件：239.94 Kbytes 页数：4 Pages | AUK | AUK | ||
PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342M 文件：231.82 Kbytes 页数：4 Pages | AUK | AUK | ||
PNP Silicon Transistor Description • Medium power amplifier Features • Large collector current : IC = -500mA • Low collector saturation voltage enabling low-voltage operation : VCE(sat) = -0.25 Max. • Complementary pair with 2SC5342N 文件：236.11 Kbytes 页数：4 Pages | AUK | AUK | ||
PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342S 文件：231.63 Kbytes 页数：4 Pages | AUK | AUK | ||
MEDIUM POWER AMPLIFIER PNP Silicon Transistor Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342S 文件：246.2 Kbytes 页数：4 Pages | KODENSHI 可天士 | KODENSHI | ||
Silicon PNP transistor in a SOT-23 Plastic Package Descriptions Silicon PNP transistor in a SOT-23 Plastic Package. Features Large IC,low VCE(sat),complementary pair with the 2SC5342S. Applications Medium power amplifier applications. 文件：1.06944 Mbytes 页数：6 Pages | FOSHAN 蓝箭电子 | FOSHAN | ||
Medium power amplifier Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342SF 文件：297.09 Kbytes 页数：4 Pages | KODENSHI 可天士 | KODENSHI | ||
PNP Silicon Transistor (Medium power amplifier) Description • Medium power amplifier Features • Large collector current : ICMax=-500mA • Suitable for low-Voltage operation because of its low saturation voltage • Complementary pair with 2SC5342SF 文件：230.93 Kbytes 页数：4 Pages | AUK | AUK |
晶体管资料
- 型号：
- 别名：
三极管、晶体管、晶体三极管
- 生产厂家：
- 制作材料：
Si-PNP
- 性质：
表面帖装型 （SMD）_高速开关 （SS）_超高频/特高频
- 封装形式：
贴片封装
- 极限工作电压：
20V
- 最大电流允许值：
0.05A
- 最大工作频率：
>4GHZ
- 引脚数：
3
- 可代换的型号：
- 最大耗散功率：
- 放大倍数：
- 图片代号：
H-15
- vtest：
20
- htest：
4000100000
- atest：
0.05
- wtest：
0
详细参数
- 型号：
2SA197
- 制造商：
Renesas Electronics
- 功能描述：
Cut Tape
- 制造商：
Renesas
- 功能描述：
PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
25+ |
SOT-23 |
20300 |
RENESAS/瑞萨原装特价2SA1978即刻询购立享优惠#长期有货 |
询价 | ||
RENESAS/瑞萨 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
询价 | ||
RENESAS/瑞萨 |
23+ |
SOT-23 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
NEC |
24+ |
SOT-23 |
13490 |
新进库存/原装 |
询价 | ||
SOT-23 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
NEC |
1922+ |
SOT-23 |
35689 |
原装进口现货库存专业工厂研究所配单供货 |
询价 | ||
NEC |
2023+ |
SOT-23 |
50000 |
原装现货 |
询价 | ||
NK/南科功率 |
2025+ |
SOT-23 |
986966 |
国产 |
询价 | ||
RENESAS/瑞萨 |
2511 |
SOT-23 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
询价 |
