Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

文件：248.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

文件：57.61 Kbytes 页数：4 Pages

SANYO

三洋

isc Silicon PNP Power Transistor

DESCRIPTION • Large current capacitance • High-speed switching • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • relay drivers,lamp drivers,motor drivers

文件：282.54 Kbytes 页数：2 Pages

ISC

无锡固电

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG

Features • Adoption of MBIT processes • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching

文件：286.83 Kbytes 页数：7 Pages

SYC

Bipolar Transistor -50V, -20A, Low VCE(sat) PNP TO-220F-3SG

Bipolar Transistor –50V, –20A, Low VCE(sat) PNP TO-220F-3SG Features • Adoption of MBIT processes • Large current capacitance • Low collector-to-emitter saturation voltage • High-speed switching Applications • Relay drivers, lamp drivers, motor drivers.

文件：248.01 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Transistor Silicon PNP Epitaxial Type

○ Audio Frequency Amplifier Applications • High collector voltage : VCEO = － 160 V (min) • Small collector output capacitance : Cob = 17pF (typ.) • High transition frequency : fT = 100MHz (typ.) • Complementary to 2SC6139

文件：171.91 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件：249.08 Kbytes 页数：5 Pages

SANYO

三洋

PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications

文件：249.08 Kbytes 页数：5 Pages

SANYO

三洋

Transistor for low frequency small-signal amplification

Feature：High current\nPolarity：PNP\nRoHS Compatible Product(s) (#)：Available\nAssembly bases：日本 Collector Current IC -1.5 A \nCollector-emitter voltage VCEO -20 V ;

Toshiba

东芝