PNP SILICON TRANSISTOR

PNP SILICON TRANSISTOR 2SA561 is PNP silicon, planar transistor designed for low power general purpose amplifiers.

文件：76.57 Kbytes 页数：1 Pages

MICRO-ELECTRONICS

PNP Plastic Encapsulated Transistor

FEATURES ● Excellent hFE Linearity

文件：482.06 Kbytes 页数：2 Pages

SECOS

喜可士

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE Linearlity

文件：359.97 Kbytes 页数：2 Pages

TGS

isc Silicon PNP Power Transistor

DESCRIPTION • Low Saturation Voltage • Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS • Designed for high-speed switching and Amplifier applications.

文件：235.42 Kbytes 页数：2 Pages

ISC

无锡固电

TO-92 Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● Excellent hFE inearlity

文件：844.87 Kbytes 页数：5 Pages

JIANGSU

长电科技

丝印：A562Z；Package：TO-92；TO-92 Plastic-Encapsulate Transistors

Features Excellent hFE inearlity

文件：1.74281 Mbytes 页数：5 Pages

DGNJDZ

南晶电子

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V(BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

文件：133.46 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

TRANSISTOR (PNP)

TRANSISTOR (PNP) FEATURES • Excellent hFE linearlity

文件：324.1 Kbytes 页数：2 Pages

KOOCHIN

灏展电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.5 W (Tamb=25℃) Collector current ICM : -0.5 A Collector-base voltage V (BR) CBO: -35 V Operating and storage junction temperature range Tstg: -55℃ to +150℃ TJ : 150℃

文件：66.76 Kbytes 页数：1 Pages

TEL

Silicon PNP transistor in a SOT-23 Plastic Package

Descriptions Silicon PNP transistor in a SOT-23 Plastic Package Features Excellent hFE linearity, complementary pair with 2SC1959M. Applications Audio frequency low power amplifier, driver stage amplifier, switching applications.

文件：532.04 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子