Plastic-Encapsulate Transistors

FEATURES . Low noise . Complementary to 2SC2712 . S m a ll Package

文件：836.19 Kbytes 页数：3 Pages

GWSEMI

唯圣电子

PNP Transistors

■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712

文件：639.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

丝印：SG；Package：SOT-23；PNP Transistors

■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712

文件：639.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),

文件：178.67 Kbytes 页数：3 Pages

TOSHIBA

东芝

General Purpose Amplifier Transistors

•Moisture Sensitivity Level: 1 •ESD Rating: TBD

文件：50.1 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

PNP Silicon Plastic-Encapsulate Transistor

Features • Capable of 0.15Watts of Power Dissipation. • Collector-current: 0.15A • Collector-base Voltage: -50V • Operating and storage junction temperature range: -55°C to +150°C • Epoxy meets UL 94 V-0 flammability rating • Moisure Sensitivity Level 1 ​​​​​​​• Lead Free Finish/RoHS

文件：199.3 Kbytes 页数：2 Pages

MCC

丝印：SO；Package：SOT-23；PNP Transistors

■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712

文件：639.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),

文件：189.37 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)

Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO= −50 V, IC= −150 mA (max) • Excellent hFElinearity: hFE(IC= −0.1 mA)/hFE(IC= −2 mA) = 0.95 (typ.) • High hFE: hFE= 70~400 • Low noise: NF = 1dB (typ.),

文件：178.67 Kbytes 页数：3 Pages

TOSHIBA

东芝

丝印：SY；Package：SOT-23；PNP Transistors

■ Features ● High voltage and high current ● High hFE: hFE = 70~400 ● Low noise: NF = 1dB (typ.), 10dB (max) ● Complementary to 2SC2712

文件：639.74 Kbytes 页数：3 Pages

YFWDIODE

佑风微