TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2

文件：153.24 Kbytes 页数：2 Pages

TOSHIBA

东芝

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage

文件：4.5647 Mbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.81 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-92LM Plastic Package

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package Features High DC current gain and excellent hFE linearity, low saturation voltage. Applications Strobe flash, medium power amplifier applications.

文件：844.52 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.69 Kbytes 页数：1 Pages

TEL

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

文件：227.58 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

New Jersey Semi-Conductor Products,

New Jersey Semi-Conductor Products

文件：227.58 Kbytes 页数：1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

PNP EPITAXIAL SILICON TRANSISTOR

PNP EPITAXIAL SILICON TRANSISTOR LOW FREQRENCY,LOW NOISE AMPLIFIER • Complemen to 2SC2712 • Collector-current:Ic=-100mA Collector-Emiller Voltage:VCE=-45V

文件：98.23 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

PNP Silicon General Purpose Transistor

FEATURES • Low Noise: NF=1 dB(Typ.), 10 dB(Max.) • Complements of the 2SC2712 MECHANICAL DATA • Case: SOT-23, Molded Plastic • Weight: 0.008 grams(approx.)

文件：324.09 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：SG；Package：SOT-23；Silicon Epitaxial Planar Transistor

FEATURES ● Low noise:NF=1dB(Typ),10dB(Max). ● Commplementary to 2SC2712. ● Small package. APPLICATIONS ● General purpose application.

文件：270.47 Kbytes 页数：4 Pages

BILIN

银河微电