TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)

Strobe Flash Applications Medium Power Amplifier Applications • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage : VCE (sat) = −0.5 V (max) (IC = −2

文件：153.24 Kbytes 页数：2 Pages

TOSHIBA

东芝

TO-92L Plastic-Encapsulate Transistors

TRANSISTOR (PNP) FEATURES ● High DC Current Gain and Excellent hFE Linearity ● Low Saturation Voltage

文件：4.5647 Mbytes 页数：3 Pages

JIANGSU

长电科技

TRANSISTOR (PNP)

FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：131.81 Kbytes 页数：1 Pages

WINNERJOIN

永而佳

Silicon PNP transistor in a TO-92LM Plastic Package

Descriptions Silicon PNP transistor in a TO-92LM Plastic Package Features High DC current gain and excellent hFE linearity, low saturation voltage. Applications Strobe flash, medium power amplifier applications.

文件：844.52 Kbytes 页数：6 Pages

FOSHAN

蓝箭电子

Plastic-Encapsulated Transistors

TRANSISTOR (PNP) FEATURE Power dissipation PCM : 0.9 W (Tamb=25℃) Collector current ICM: -2A Collector-base voltage V(BR)CBO: -20 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃

文件：64.69 Kbytes 页数：1 Pages

TEL

Strobe Flash Applications Medium Power Amplifier Applications

文件：162.95 Kbytes 页数：4 Pages

TOSHIBA

东芝

Strobe Flash Applications Medium Power Amplifier Applications

文件：150.17 Kbytes 页数：4 Pages

TOSHIBA

东芝

Power transistor for high-speed switching applications

Polarity：PNP\nRoHS Compatible Product(s) (#)：Available Collector Current IC -2 A \nCollector-emitter voltage VCEO -10 V ;

Toshiba

东芝

双极型三极管

JESTEK

江智科技

晶体管

JSCJ

长晶科技