2SA1162-O

丝印：SO；Package：SOT-23；PNP Transistors

■Features ●Highvoltageandhighcurrent ●HighhFE:hFE=70~400 ●Lownoise:NF=1dB(typ.),10dB(max) ●Complementaryto2SC2712

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

Features •Capableof0.15WattsofPowerDissipation. •Collector-current:0.15A •Collector-baseVoltage:-50V •Operatingandstoragejunctiontemperaturerange:-55°Cto+150°C •EpoxymeetsUL94V-0flammabilityrating •MoisureSensitivityLevel1 ​​​​​​​•LeadFreeFinish/RoHS

2SA1162-O

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O

PNP Transistors

2SA1162-O

小信号双极型晶体管;

2SA1162-O_13

PNP Silicon Plastic-Encapsulate Transistor

2SA1162-O-HF

PNP Transistors

2SA1162-O,LF

Package：TO-236-3，SC-59，SOT-23-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O,LXHF

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SMINI

Toshiba Semiconductor and Storage

2SA1162-O-AP

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 50V 0.15A SOT23