N Channel MOSFET ESD Protected 2000V

INTERFACE AND SWITCHING APPLICATION. FEATURES • ESD Protected 2000V. • High density cell design for low RDS(ON). • Voltage controlled small signal switch. • Rugged and reliable. • High saturation current capablity.

文件：372.74 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

文件：367.36 Kbytes 页数：3 Pages

MCC

Dual N-Channel MOSFET

Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V Mechanical Data: *Case: SOT-363, Molded Plastic *Case Material-UL Flammability Rating 94V-0 *Terminals: Solderable per MIL-STD-202, Method 208 *Weight: 0.006 gr

文件：152.56 Kbytes 页数：4 Pages

WEITRON

60V ESD Protected N-Channel Enhancement Mode MOSFET

RDS(ON), VGS@10V, IDS@500mA=2Ω RDS(ON), VGS@4.5V, IDS@200mA=3Ω FEATURES • Advanced Trench Process Technology • Ultra Low On Resistance : 2Ω • Fast Switching Speed : 20ns • Low Input and Output Leakage Current • 2KV ESD Protection • Specially Designed for High Speed Circuit, Battery Operate

文件：256.12 Kbytes 页数：4 Pages

HY

虹扬科技

丝印：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Re

文件：183.25 Kbytes 页数：5 Pages

PANJIT

強茂

Dual N-Channel Small Signal MOSFET

FEATURES ● Low on-resistance ● Fast switching Speed ● Low-voltage drive ● Easily designed drive circuits ● ESD protected:2000V MECHANICAL DATA ● Case: SOT-363 ● Case Material-UL flammability rating 94V-0 ● Terminals: Solderable per MIL-STD-202, Method 208 ● Weight: 0.006 grams(approx.)

文件：431.3 Kbytes 页数：2 Pages

SECOS

喜可士

丝印：72K；Package：SOT-363；Plastic-Encapsulate MOSFET

Features  High density cell design for low RDS(ON)  Voltage controlled small signal switch  Rugged and reliable  High saturation current capability  ESD protected  Load Switch for Portable Devices.  DC/DC Converter.

文件：1.42099 Mbytes 页数：3 Pages

GWSEMI

唯圣电子

丝印：72K；Package：SOT-363；Dual N-Channel Enhancement Mode Field Effect Transistor

Product Summary ● VDS 60V ● ID 0.34A ● RDS(ON)( at VGS=10V)

文件：616.27 Kbytes 页数：6 Pages

YANGJIE

扬杰电子

60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : R

文件：308.91 Kbytes 页数：7 Pages

PANJIT

強茂

N-Channel Enhancement Mode Field Effect Transistor

Features • High density cell design for Low RDS(ON) • Voltage controlled small signal switch • Rugged and reliable • High saturation current capability • ESD protected up to 2KV • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • Halogen free available upon request

文件：429.13 Kbytes 页数：3 Pages

MCC