60V N-Channel Enhancement Mode MOSFET - ESD Protected

FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), VGS@4.5V,IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance • Very Low Leakage Current In Off Condition • Specially Designed for Battery Operated Systems, Solid-State Relays Drivers

文件：326.6 Kbytes 页数：7 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：K27；Package：SOT-363；60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 页数：6 Pages

PANJIT

強茂

60V N-Channel Enhancement Mode MOSFET – ESD Protected

Features  RDS(ON), VGS@10V, ID@500mA

文件：599.54 Kbytes 页数：6 Pages

PANJIT

強茂

丝印：72K；Package：SOT-363；Plastic-Encapsulate MOSFETS

FEATURE High density cell design for Low RDS（on） Voltage controlled small signal switch Rugged and reliable High saturation current capability ESD protected -CAR for automotive and other applications requiring unique site and control change requirements;AEC-Q101 qualified and PPAP ca

文件：337.35 Kbytes 页数：4 Pages

GWSEMI

唯圣电子

MOSFET

Features - High density cell design for low RDS(ON). - Voltage controlled small signal switch. - High saturation current capability. - ESD protected.

文件：511.93 Kbytes 页数：5 Pages

COMCHIP

典琦

N-channel MOSFET

文件：1.31582 Mbytes 页数：5 Pages

JIANGSU

长电科技

Dual N-Channel Small Signal MOSFET

文件：431.3 Kbytes 页数：2 Pages

SECELECTRONICS

上优电子

Dual N-Channel 60 V (D-S) MOSFET

文件：945.33 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

60V N-Channel Enhancement Mode MOSFET - ESD Protected

文件：119.97 Kbytes 页数：5 Pages

PANJIT

強茂