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2N6770

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

文件:113.77 Kbytes 页数:2 Pages

MICROSEMI

美高森美

2N6770

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

文件:256.99 Kbytes 页数:5 Pages

MICROSEMI

美高森美

2N6770

N-CHANNEL MOSFET

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

文件:256.99 Kbytes 页数:5 Pages

MICROSEMI

美高森美

2N6770

N-Channel Power MOSFETs, 12A, 450V/500V

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

文件:137.01 Kbytes 页数:5 Pages

FAIRCHILD

仙童半导体

2N6770

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 12A@ TC= 25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.4Ω(Max)@VGS= 10V DESCRIPTION · Switching Power Supplies · Motor Controls · Inverters

文件:284.48 Kbytes 页数:2 Pages

ISC

无锡固电

2N6770

N-CHANNEL ENHANCEMENT MOSFET

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

文件:115.79 Kbytes 页数:1 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6770

N-Channel Power MOSFETs,

Description These devices are n-channel, enchancement mode, power MOSFETs designed especially for high power, high speed applications, such as off-line switching power supplies, UPS, AC and DC motor controls, relay and solenoid drivers. • VGS Rated at ±20 V • Silicon Gate for Fast Switching Spe

文件:89.27 Kbytes 页数:2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

2N6770

VGS Rated at 짹20V

文件:47.22 Kbytes 页数:2 Pages

ISC

无锡固电

2N6770

N-CHANNEL MOSFET

文件:257.01 Kbytes 页数:5 Pages

MICROSEMI

美高森美

2N6770

N-CHANNEL MOSFET

文件:244.82 Kbytes 页数:5 Pages

MICROSEMI

美高森美

详细参数

  • 型号:

    2N6770

  • 制造商:

    International Rectifier

  • 功能描述:

    Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-204AA

  • 功能描述:

    TRANS MOSFET N-CH 500V 12A 3PIN TO-204AA - Bulk

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    2N6770 - Bulk

  • 功能描述:

    N CH MOSFET 500V 12A TO-204AA

  • 功能描述:

    N CH MOSFET, 500V, 12A, TO-204AA

  • 功能描述:

    N CH MOSFET, 500V, 12A, TO-204AA; Transistor

  • Polarity:

    N Channel; Continuous Drain Current

  • Id:

    12A; Drain Source Voltage

  • Vds:

    500V; On Resistance

  • Rds(on):

    400mohm; Rds(on) Test Voltage

  • Vgs:

    10V; Threshold Voltage Vgs

  • Typ:

    4V; No. of

  • Pins:

    2;RoHS

  • Compliant:

    No

供应商型号品牌批号封装库存备注价格
IR
24+
TO-03
1500
AI芯片,车规MCU原装现货/为新能源汽车电子行业采购保驾护航
询价
IR/MOT
24+
TO-3
850
原装现货假一罚十
询价
IR
24+
TO-3
820
询价
IR
24+
TO-03
200
进口原装正品优势供应
询价
IR/MOT
专业铁帽
TO-3
850
原装铁帽专营,代理渠道量大可订货
询价
IR/MOT
专业铁帽
TO-3
67500
铁帽原装主营-可开原型号增税票
询价
IR
2447
TO-3
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
TI
QFN56
6850
莱克讯每片来自原厂原盒原包装假一罚十价优
询价
Microsemi Corporation
22+
TO204AE
9000
原厂渠道,现货配单
询价
25+
长期备有现货
500000
行业低价,代理渠道
询价
更多2N6770供应商 更新时间2026-4-17 15:49:00