Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

文件：121.84 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

文件：121.84 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

These medium−power, high−performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features • Pb−Free Package is Available** • Low Saturation Voltage − VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dissipation Due to Thermopad Construct

文件：117.78 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Medium-Power Plastic PNP Silicon Transistors

文件：120.83 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：管件 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 1A TO126

ONSEMI

安森美半导体