丝印：24D；Package：MELF；500mW SURFACE MOUNT ZENER DIODE

Planar Die Construction 500mW Power Dissipation 2.0 – 56V Nominal Zener Voltage Ideally Suited for Automated Assembly For Use in Voltage Stabilizer or Reference

文件：65.93 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：24D；Package：SMAF；Surface mount transient voltage suppressor power 400 watts

FEATURES For surface mounted applications in order to optimize board space. Low profile package Glass passivated junction Low inductance Plastic package has Underwriters Laboratory Flammability

文件：1.10473 Mbytes 页数：7 Pages

SY

顺烨电子

丝印：24D；Package：SOD-323；TVS Protection (Uni-Directional)

文件：123.17 Kbytes 页数：2 Pages

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

丝印：24D；Surface mount transient voltage suppressor power 200 watts

文件：1.51236 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：24D；Package：SMAF；Surface mount transient voltage suppressor power 200 watts

文件：1.51387 Mbytes 页数：5 Pages

JUXING

广东钜兴电子

丝印：24DP10L；Package：PG-TSDSON-8FL；OptiMOSTM Power-Transistor, -100 V

Features • P-Channel • Very low on-resistance RDS(on) @ VGS=4.5 V • 100 avalanche tested • Logic Level • Enhancement mode • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

文件：1.37379 Mbytes 页数：11 Pages

Infineon

英飞凌

丝印：24DN6C；Package：DFN8；MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：24DN6W；Package：DFN8；MOSFET ??Power, Dual N-Channel, SO-8FL 60 V, 22.6 m, 24 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWD024N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Hal

文件：255.85 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：24DC；Package：SOT-23；INA281-Q1 AEC-Q100, ??-V to 110-V, 1.3-MHz Current-Sense Amplifier

文件：1.25665 Mbytes 页数：25 Pages

TI

德州仪器

丝印：24D81；Package：PG-SSO-3-92；Dynamic Differential Hall Effect Sensor

文件：89.32 Kbytes 页数：6 Pages

Infineon

英飞凌