N-channel 650 V, 0.160 typ., 18 A MDmesh V Power MOSFET in D2PAK, I2PAK

文件：1.17545 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

20 Amps,650 Volts N-CHANNEL MOSFET

文件：481.89 Kbytes 页数：7 Pages

CHONGQING

平伟实业

丝印：20N650；Package：TO-220F；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-220；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N650；Package：TO-263；N Channel Super Junction Power MOSFET III

Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant

文件：1.50672 Mbytes 页数：11 Pages

RECTRON

丽正国际

丝印：20N65C3；Package：TO-220FP；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

文件：784.74 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-262；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

文件：784.74 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-220；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

文件：784.74 Kbytes 页数：14 Pages

INFINEON

英飞凌

丝印：20N65M5；Package：TO-220FP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

文件：1.05665 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：20N65M5；Package：I2PAKFP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

文件：1.05665 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体