丝印：20N65M5；Package：TO-3FP；N-channel 650 V, 0.160 Ω typ., 18 A MDmesh M5 Power MOSFETs in TO-220FP, I²PAKFP and TO-3PF packages

Features  Extremely low RDS(on)  Low gate charge and input capacitance  Excellent switching performance  100 avalanche tested Applications  Switching applications Description These devices are N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology

文件：1.05665 Mbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：20N65C3；Package：TO-220FP；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-220FP；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-262；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-262；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65C3；Package：TO-220；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes 页数：15 Pages

INFINEON

英飞凌

丝印：20N65AP；Package：TO-247；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：20N65APS；Package：TO-247S；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：20N65AF；Package：TO-220F(1.3mm)；20A 650V N-channel enhancement mode field effect transistor

文件：891.65 Kbytes 页数：6 Pages

YFWDIODE

佑风微