型号：NTTFSSH1D3N04XL；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices ar

文件：325.59 Kbytes 页数：8 Pages

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型号：NVMJS1D3N04CTWG；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

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安森美半导体

型号：NTMJS1D3N04CTWG；Package：LFPAK8；Power MOSFET 40 V, 1.3 m, 235 A, Single N?묬hannel

文件：346.1 Kbytes 页数：7 Pages

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安森美半导体

型号：NTMYS1D3N04CTWG；Package：LFPAK；MOSFET ??Power, Single, N-Channel 40 V, 1.15 m, 252 A

文件：347.14 Kbytes 页数：7 Pages

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安森美半导体