丝印：1D6；Package：SC70；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

1 Features • Scalable CMOS amplifier for low-cost applications • Rail-to-rail input and output • Low input offset voltage: ±0.4 mV • Unity-gain bandwidth: 1 MHz • Low broadband noise: 27 nV/√Hz • Low input bias current: 5 pA • Low quiescent current: 60 μA/Ch • Unity-gain stable • Internal

文件：6.43013 Mbytes 页数：98 Pages

TI

德州仪器

丝印：1D6；Package：SC70；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.46205 Mbytes 页数：86 Pages

TI

德州仪器

丝印：1D6；Package：SC70；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.3778 Mbytes 页数：76 Pages

TI1

德州仪器

丝印：1D6；Package：SC70；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.0411 Mbytes 页数：81 Pages

TI1

德州仪器

丝印：1D6；Package：SC70；Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：4.12702 Mbytes 页数：70 Pages

TI1

德州仪器

丝印：1D6；Package：SC70；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：5.32948 Mbytes 页数：82 Pages

TI1

德州仪器

丝印：1D6；Package：SC70；TLV900x Low-Power, RRIO, 1-MHz Operational Amplifier for Cost-Sensitive Systems

文件：6.33019 Mbytes 页数：94 Pages

TI

德州仪器

丝印：1D60A；Package：SOT-89-2L；4 Quadrants Triacs

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control , lighting control and static switching relay also designed for use in MPU interface, TTLlogic. Features ◆ Repetitive Peak Off-Sta

文件：266.29 Kbytes 页数：6 Pages

ADV

爱德微

丝印：1D60；Package：TO-92；4 Quadrants Triacs

General Description This device is suitable for low power AC switching application, phase control application such as fan speed and temperature modulation control , lighting control and static switching relay also designed for use in MPU interface, TTLlogic. Features ◆ Repetitive Peak Off-Sta

文件：258.519 Kbytes 页数：6 Pages

ADV

爱德微

丝印：1D6N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.36 m, 250 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：364.23 Kbytes 页数：7 Pages

ONSEMI

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