丝印：1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices ar

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MOSFET - Power, Single, N-Channel, Source Down 33, WDFN9, 40V, 1.3mΩ, 207A

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with g • Ultra Low Rds(on) to Improve System Efficiency\n• Low Qg and Capacitance to Minimize Driving and Switching Losses\n• Excellent Thermal Conduction by Advanced Source−Down Center Gate Package Technology (3.3x3.3mm)\n• Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, 10min. dwell,;

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MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

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MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

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安森美半导体