NTTFSSH1D3N04XL中文资料MOSFET - Power, Single, N-Channel, Source Down 33, WDFN9, 40V, 1.3mΩ, 207A数据手册ONSEMI规格书

描述 Description

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with good softness behavior can perform lower voltage spike with better EMI performance.

  This product is an improved 3x3 source-down GEN2 package product, this has better thermal performance than previous 3x3 source down package with high thermal conductivity mold compound to achieve TC-55°C to +150°C

特性 Features

• Ultra Low Rds(on) to Improve System Efficiency
• Low Qg and Capacitance to Minimize Driving and Switching Losses
• Excellent Thermal Conduction by Advanced Source−Down Center Gate Package Technology (3.3x3.3mm)
• Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, 10min. dwell, 20℃/min, 6layers 2.35T
• These Devices are Pb−Free, Halogen−Free/BFR−Free and are RoHS Compliant

应用 Application

• High Switching Frequency DC−DC Conversion
• Synchronous Rectifier