丝印：1D3；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

文件：431.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D3；Package：SC70；OPA1671 13-MHz, Low-Noise, Rail-to-Rail, Audio Operational Amplifier

文件：1.49339 Mbytes 页数：28 Pages

TI1

德州仪器

丝印：1D3；Package：SC70；OPA1671 13-MHz, Low-Noise, Rail-to-Rail, Audio Operational Amplifier

文件：1.49339 Mbytes 页数：28 Pages

TI1

德州仪器

丝印：1D3N4；Package：SO-8FL；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Battery Protection • ORing

文件：131.53 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

丝印：1D3N04；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down, WDFN9 40 V, 1.3 m, 207 A

Features • Advanced Source−Down Package Technology (3.3x3.3mm) with Excellent Thermal Conduction • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Losses • These Devices ar

文件：325.59 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

丝印：1D3N4W；Package：DFN5；MOSFET - Power, Single N-Channel, STD Gate, SO8FL 40 V, 1.3 m, 195 A

Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Small Footprint (5 x 6 mm) with Compact Design • AECQ101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Motor Drive • Ba

文件：148.22 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK8；MOSFET ??Power, Single N-Channel 40 V, 1.3 m, 235 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Comp

文件：361.91 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N08M；Package：DFNW8；MOSFET - Power, Single N-Channel 80 V, 1.25 m, 348 A

Features • Small Footprint (8x8 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • New Power 88 Dual Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant • Wettable Flank Pl

文件：423.86 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N06；Package：TDFN9；MOSFET - Power, Single N-Channel, Source-Down TDFN9 60 V, 1.3 m, 243 A

文件：351.83 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D3N04C；Package：LFPAK8；Power MOSFET 40 V, 1.3 m, 235 A, Single N?묬hannel

文件：346.1 Kbytes 页数：7 Pages

ONSEMI

安森美半导体