MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

文件：433.65 Kbytes 页数：8 Pages

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安森美半导体

丝印：1D3；Package：WDFN9；MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

文件：431.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, Source Down DualCool 33, WDFN9 40 V, 1.3 m, 207 A

Features • Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm) • Low RDS(on) to Minimize Conduction Loss • Low QRR with Soft Recovery to Minimize ERR Loss and Voltage Spike • Low QG and Capacitance to Minimize Driving and Switching Los

文件：431.83 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single, N-Channel, Source Down Dual Cool 33, WDFN9, 40V, 1.3mΩ, 207A

The latest 40V logic gate level power MOSFET technology with best-in-class Figure-of-Merit for switching application. Lower on-resistance and less output capacitance can reduce the conduction and switching loss to accomplish higher efficiency requirement. smaller peak reverse recovery current with g • Ultra Low Rds(on) to Improve System Efficiency\n• Low Qg and Capacitance to Minimize Driving and Switching Losses\n• Excellent Thermal Conduction by Advanced Source−Down Center Gate Dual−Cooling Package Technology (3.3x3.3mm)\n• Board level reliability (BLRT testing): 1000cycle with -40℃ to 125℃, ;

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安森美半导体