18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes 页数：4 Pages

UTC

友顺

18A, 650V N-CHANNEL POWER MOSFET

文件：182.59 Kbytes 页数：4 Pages

UTC

友顺

N-Channel 60 V (D-S) MOSFET

文件：960.63 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 600 V, 0.260 廓, 6 A PowerFLAT??8x8 HV MDmesh??II Power MOSFET

文件：610.57 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.030609 Mbytes 页数：13 Pages

INFINEON

英飞凌

丝印：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • Low Vgs(th) spread • Improved current sharing • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IE

文件：1.12268 Mbytes 页数：15 Pages

INFINEON

英飞凌

丝印：18N200；Package：TO-263；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：18N200；Package：TO-220；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：18N200；Package：TO-220F；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：18N60M2；Package：D2PAK；N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D2PAK,I2PAK, TO-220 and TO-247 packages

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • 100 avalanche tested • Zener-protected Application • Switching applications • LLC converters, resonant converters Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2

文件：861.3 Kbytes 页数：27 Pages

STMICROELECTRONICS

意法半导体