RM18N200T2芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RM18N200HD	文件：220.28 Kbytes Page：8 Pages	丝印：18N200；Package：TO-263；N-Channel Super Junction Power MOSFET Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on) 文件：220.28 Kbytes 页数：8 Pages	RECTRON 丽正国际	RECTRON
RM18N200T2	文件：220.28 Kbytes Page：8 Pages	丝印：18N200；Package：TO-220；N-Channel Super Junction Power MOSFET Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on) 文件：220.28 Kbytes 页数：8 Pages	RECTRON 丽正国际	RECTRON
RM18N200TI	文件：220.28 Kbytes Page：8 Pages	丝印：18N200；Package：TO-220F；N-Channel Super Junction Power MOSFET Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on) 文件：220.28 Kbytes 页数：8 Pages	RECTRON 丽正国际	RECTRON

更多18N200供应商更新时间2025-9-8 14:01:00