丝印：18W65G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 55 A in an HiP247-4 package

Features • AEC-Q101 qualified • Very low RDS(on) over the entire temperature range • High speed switching performances • Very fast and robust intrinsic body diode • Very high operating junction temperature capability (TJ = 200 °C) • Source sensing pin for increased efficiency Applications

文件：506.41 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体