丝印：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.030609 Mbytes 页数：13 Pages

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英飞凌

丝印：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • Low Vgs(th) spread • Improved current sharing • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IE

文件：1.12268 Mbytes 页数：15 Pages

Infineon

英飞凌