丝印：18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：662.21 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-252；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：966.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-251；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The 18N20J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：714.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-220；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：18N20F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：758.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N200；Package：TO-263；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：18N200；Package：TO-220；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际

丝印：18N200；Package：TO-220F；N-Channel Super Junction Power MOSFET

Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Halogen-free VDS =200V , ID =18A , VGS =10V , RDS(on)

文件：220.28 Kbytes 页数：8 Pages

RECTRON

丽正国际