丝印：18N04L6；Package：PG-TSDSON-8FL；OptiMOSTM 6 Power-Transistor, 40 V

文件：1.03523 Mbytes 页数：11 Pages

INFINEON

英飞凌

丝印：18N50AP；Package：TO-247；18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：18N50APS；Package：TO-247S；18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：18N50AF；Package：TO-220F(1.3mm)；18A 500V N-channel enhanced field effect transistor

文件：817.72 Kbytes 页数：6 Pages

YFWDIODE

佑风微

18A, 200V, 0.20Ω, N-CHANNEL POWER MOSFET

These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance,and high switching speed, Linear Transfer Characteristics, so can be use in a variety of power conversion applications. The 18N20 suitable for resonant and PWM converter topologies. • RDS(ON) < 0.20Ω @ VGS=10V, ID=9.0A \n• Fast switching capability \n• Avalanche energy specified \n• Improved dv/dt capability, high ruggedness;

UTC

友顺

100V N Channel TRENCH MOSFET

GOFORD

谷峰半导体

Trench Mosfet

GOFORD

谷峰半导体