丝印：18N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：495.62 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：18N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：494.5 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：18N；WE-KI SMT Wire Wound Ceramic Inductor

General Information: It is recommended that the temperature of the component does not exceed +125 °C under worst case conditions Ambient Temperature (referring to IR) -40 up to +110 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：491.14 Kbytes 页数：6 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：18N；Package：SOT563-6；1-A High Efficiency Synchronous Buck Converter in SOT Package

文件：1.42959 Mbytes 页数：26 Pages

TI

德州仪器

丝印：18N；Package：SOT-5X3；1-A High Efficiency Synchronous Buck Converter in SOT Package

文件：1.42959 Mbytes 页数：26 Pages

TI

德州仪器

丝印：18N；Package：SOT-5X3；1-A High Efficiency Synchronous Buck Converter in SOT Package

文件：1.42959 Mbytes 页数：26 Pages

TI

德州仪器

丝印：18N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：637.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N20 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：662.21 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-252；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N20A uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

文件：966.53 Kbytes 页数：6 Pages

GOFORD

谷峰半导体