丝印：18N20F；Package：TO-220F；N-Channel Enhancement Mode Power MOSFET

Description The 18N20F uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：758.9 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSF

▼ Low Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic ▼ RoHS Compliant & Halogen-Free Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It p

文件：73.58 Kbytes 页数：5 Pages

A-POWER

富鼎先进电子

丝印：18N20；Package：TO-251；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-251；N-Channel Enhancement Mode Power MOSFET

Description The 18N20J uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：714.54 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N20；Package：TO-220；DC-DC & DC-AC Converters for telecom,

Application · DC-DC & DC-AC Converters for telecom, industrial and consumer environment · Uninterruptible Power Supply (UPS) · Switch Mode Low Power Supplies · Industrial Actuators

文件：4.44669 Mbytes 页数：9 Pages

GOFORD

谷峰半导体

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

文件：163.78 Kbytes 页数：6 Pages

UTC

友顺

Fast Switching

• DESCRIPTION • Drain Current ID= 18A@ TC=25℃ • Drain Source Voltage : VDSS= 500V(Min) • Static Drain-Source On-Resistance : RDS(on) = 0.32Ω(Max) • Fast Switching • APPLICATIONS • Switch regulators • Switching converters, motor drivers, relay drivers

文件：54.63 Kbytes 页数：2 Pages

ISC

无锡固电

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

文件：163.78 Kbytes 页数：6 Pages

UTC

友顺

18 Amps, 500 Volts N-CHANNEL POWER MOSFET

■ DESCRIPTION The UTC 18N50 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance a

文件：163.78 Kbytes 页数：6 Pages

UTC

友顺

500V N-Channel MOSFET

Description UniFET™ MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable

文件：1.033079 Mbytes 页数：10 Pages

FAIRCHILD

仙童半导体