18N10

Marking：18N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The18N10usesadvancedtrenchtechnologytoprovide excellentRDS(ON),lowgatecharge.Itcanbeusedinawide varietyofapplications. Application lPowerswitch lDC/DCconverters

IPF018N10NM5LF2

Marking：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21

IPM018N10NM5LF2

Marking：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features •Idealforhot‑swapande‑fuseapplications •Verylowon‑resistanceRDS(on) •WidesafeoperatingareaSOA •LowVgs(th)spread •Improvedcurrentsharing •N‑channel,normallevel •100%avalanchetested •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIE