丝印：18N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：637.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

丝印：18N10LF2；Package：PG-TO263-7；MOSFET OptiMOS™ 5 Linear FET 2 , 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

文件：1.030609 Mbytes 页数：13 Pages

Infineon

英飞凌

丝印：18N10LF2；Package：PG-HSOG-4；MOSFET OptiMOS™ 5 Linear FET 2, 100 V

Features • Ideal for hot‑swap and e‑fuse applications • Very low on‑resistance RDS(on) • Wide safe operating area SOA • Low Vgs(th) spread • Improved current sharing • N‑channel, normal level • 100% avalanche tested • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IE

文件：1.12268 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：18N10；Package：TO-252；N-Channel Enhancement Mode Power MOSFET

Description The 18N10 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

文件：637.74 Kbytes 页数：6 Pages

GOFORD

谷峰半导体

Fast Switching

文件：67.86 Kbytes 页数：2 Pages

ISC

无锡固电