Dual 40V complementary transistors in SOT23-6

Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving

文件：108.12 Kbytes 页数：4 Pages

Zetex

Dual 40V complementary transistors in SOT23-6

Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe

文件：115.05 Kbytes 页数：4 Pages

DIODES

美台半导体

Dual 40V complementary transistors in SOT23-6

Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe

文件：115.05 Kbytes 页数：4 Pages

DIODES

美台半导体

Dual 40V complementary transistors in SOT23-6

Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving

文件：108.12 Kbytes 页数：4 Pages

Zetex

Dual 40V complementary transistors in SOT23-6

Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe

文件：115.05 Kbytes 页数：4 Pages

DIODES

美台半导体