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ZXT10P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS

文件:245.2 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10P12DE6

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:232.51 Kbytes 页数:6 Pages

ZETEX

ZXT10P12DE6

12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

文件:438.3 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT10P12DE6

PNP, 12V, 3A, SOT26

This new 4th generation ultra low saturation transistor utilises the Zetex\nmatrix structure combined with advanced assembly techniques to give\nextremely low on state losses. This makes it ideal for high efficiency, low\nvoltage switching applications.

Diodes

美台半导体

ZXT10P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:232.51 Kbytes 页数:6 Pages

ZETEX

ZXT10P12DE6TA

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS

文件:245.2 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

Features • BVCEO > -12V • IC = - 3A Continuous Collector Current • ICM = -10A Peak Pulse Current • RCE(sat) = 65mΩ for a Low Equivalent On-Resistance • Low Saturation Voltage (-100mV max @ 1A) • hFE Characterized up to -10A for High Current Gain Hold-Up • Totally Lead-Free & Fully RoHS

文件:245.2 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10P12DE6TC

12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:232.51 Kbytes 页数:6 Pages

ZETEX

ZXT10P12DE6_15

12V PNP LOW SATURATION SWITCHING TRANSISTOR IN SOT26

文件:438.3 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT10P12DE6TA

Package:SOT-23-6;包装:卷带(TR) 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 12V 3A SOT23-6

DIODES

美台半导体

技术参数

  • Compliance(Only Automotive supports PPAP):

    Standard

  • Polarity:

    PNP

  • IC (A):

    3

  • ICM (A):

    10

  • PD (W):

    1.1

  • hFE (Min):

    300

  • hFE (@ IC) (A):

    0.1

  • hFE(Min 2):

    180

  • hFE (@ IC2) (A):

    2.5

  • VCE(sat) Max (mV):

    17

  • VCE(SAT) (@ IC/IB) (A/mA):

    0.1/10

  • VCE(sat) (Max.2) (mV):

    300

  • VCE(sat) (@ IC/IB2) (A/mA):

    3/50

  • fT (MHz):

    110

  • RCE(sat) (mΩ):

    65

  • Packages:

    SOT26

供应商型号品牌批号封装库存备注价格
ZETEX
24+
SOT23-6
3000
询价
ZETEX/DIODES
16+
SOT23-6L
33245
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥!
询价
ZETEX
2016+
SOT23-6
18053
只做原装,假一罚十,公司可开17%增值税发票!
询价
ZETEX
25+
SOT23-6
6000
福安瓯为您提供真芯库存,真诚服务
询价
ZETEX
24+
SOT-23-6
4820
只做原装正品
询价
ZETEX
23+
SOT23-6
24000
原装正品,假一罚十
询价
ZETEX
24+
SOT23-6
5989
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
DIODES/ZETEX
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
ZETEX
20+
SOT23-6
49000
原装优势主营型号-可开原型号增税票
询价
ZETEX
25+
SOT23-6
12500
全新原装现货热卖,价格优势
询价
更多ZXT10P12DE6供应商 更新时间2026-1-27 10:21:00