Complementary, 30V, 1.5A, SOT26

Advanced process capability has been used to achieve this high performance device. Combining NPN and PNP transistors in the SOT26 package provides a compact solution for the intended applications. •NPN + PNP combination\n•BVCEO > 30 (-30)V\n•BVCEV > 40 (-40)V\n•ICM = 5 (-5)A Peak Pulse Current\n•Totally Lead-Free & Fully RoHS compliant \n•Halogen and Antimony Free. “Green” Device \n•Qualified to AEC-Q101 Standards for High Reliability\n•PPAP capable ;

Diodes

美台半导体

Dual 40V complementary transistors in SOT23-6

Features • 40V complementary device • Up to 5 amps peak current • High hFE • SOT236 package Applications • MOSFET and IGBT gate driving

文件：108.12 Kbytes 页数：4 Pages

Zetex

Dual 40V complementary transistors in SOT23-6

Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe

文件：115.05 Kbytes 页数：4 Pages

DIODES

美台半导体

Dual 40V complementary transistors in SOT23-6

Description Advanced process capability is used to achieve this high performance device. Combining NPN and PNP transistors, the SOT26 package provides a compact solution for the intended applications. Features • NPN + PNP Combination • BVCEO > 30 (-30)V • BVCEV > 40 (-40)V • ICM = 5 (-5)A Pe

文件：115.05 Kbytes 页数：4 Pages

DIODES

美台半导体