60V, SOT23, PNP medium power transistor

Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features • Higher power diss

文件：543.59 Kbytes 页数：6 Pages

ZETEX

60V, SOT23, NPN medium power transistor

文件：513.65 Kbytes 页数：6 Pages

DIODES

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features BVCEO > 60V Maximum Continuous Collector Current IC = 5A VCE(SAT)

文件：493 Kbytes 页数：7 Pages

DIODES

美台半导体

丝印：851；Package：SOT23；60V NPN MEDIUM POWER TRANSISTOR IN SOT23

Features BVCEO > 60V Maximum Continuous Collector Current IC = 5A VCE(SAT)

文件：493 Kbytes 页数：7 Pages

DIODES

美台半导体

60V, SOT23, NPN medium power transistor

文件：513.65 Kbytes 页数：6 Pages

DIODES

美台半导体

NPN, 60V, 5A, SOT23

Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium.

Diodes

美台半导体

60V NPN MEDIUM POWER TRANSISTOR IN SOT23

•BVCEO > 60V\n•Maximum Continuous Collector Current IC = 5A\n•VCE(SAT) < 45mV @ 1A\n•RCE(SAT) = 25mΩ\n•High Power Dissipation SOT23 (Type DN) Package\n•High Peak Current\n•Low Saturation Voltage\n•140V Forward Blocking Voltage;

Diodes

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：剪切带（CT）带盒（TB） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A SOT23

DIODES

美台半导体

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 60V 5A SOT23-3

DIODES

美台半导体