ZXTC6718MCQ

20V COMPLEMENTARY LOW SATURATION TRANSISTORS; NPN Transistor\n\nBVCEO > 20V\nIC = 4.5A Continuous Collector Current\nLow Saturation Voltage (150mV Max @ 1A)\nRSAT = 47mΩ for a Low Equivalent On-Resistance\n\n\nPNP Transistor\n\nBVCEO > -20V\nIC = -3.5A Continuous Collector Current\nLow Saturation Voltage (-220mV Max @ -1A)\nRSAT = 64mΩ for a Low Equivalent On-Resistance\n\n\nhFE Characterized up to 6A for High Current Gain Hold Up\nLow Profile 0.8mm High Package for Thin Applications\nRθJA Efficient, 40% Lower than SOT26\n6mm2 Footprint, 50% Smaller than TSOP6 and SOT26;

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of automotive applications.

6718

CustomerSpecification

Construction 1)Component11X1HOOKUP a)Conductor12(65/30)AWGTinnedCopper0.093 b)Insulation0.012Wall,Nom.MPPE0.117+/-0.002 (1)Print ALPHAWIREECOWIRETM12AWGE163869-DB RUAWM11028105C600VVW-1---CRUAWMIA/B 105C600VFT1CEROHS (2)Color(s) WHITE,BLACK

6718

DualOutput,75OhmBNCCircuitBoardMount,WhiteValoxCase

6718

CustomerSpecification

6718-RC

HighCurrentToroidInductors(withheader)

SpecialFeatures •Lowradiation •Highcurrentcapacity •Highinductance •MountedonUL94V-0ratedheader •FixedpinsforeasyPCBinsertion •Operatingtemperature:-55to+105°C

AON6718L

N-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription SRFETTMAON6718LusesadvancedtrenchtechnologywithamonolithicallyintegratedSchottkydiodetoprovideexcellentRDS(ON),andlowgatecharge.ThisdeviceisideallysuitedforuseasalowsideswitchinCPUcorepowerconversion. -RoHSCompliant -HalogenFree Featur

BD6718FV

Single-PhaseFull-WaveMotorPre-DriverforFanMotor

CDL6718

NPNEPITAXIALSILICONPOWERTRANSISTOR

G6718

TheG6718isdesignedforgeneralpurposemediumpoweramplifierandswitchingapplications

G6718

NPNEPITAXIALPLANARTRANSISTOR