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ZXT10N20DE6

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

文件:230.48 Kbytes 页数:6 Pages

ZETEX

ZXT10N20DE6

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:243.18 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10N20DE6

NPN, 20V, 3.5A, SOT26

This new 4th generation ultra low saturation transistor utilises the Zetex\nmatrix structure combined with advanced assembly techniques to give\nextremely low on state losses. This makes it ideal for high efficiency, low\nvoltage switching applications.

Diodes

美台半导体

ZXT10N20DE6TA

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

文件:230.48 Kbytes 页数:6 Pages

ZETEX

ZXT10N20DE6TA

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:243.18 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10N20DE6TC

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY VCEO=20V; RSAT = 55m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switchin

文件:230.48 Kbytes 页数:6 Pages

ZETEX

ZXT10N20DE6TC

20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Low Equivalent On Res

文件:243.18 Kbytes 页数:6 Pages

DIODES

美台半导体

ZXT10N20DE6_15

NPN LOW SATURATION SWITCHING TRANSISTOR

文件:365.63 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT10N20DE6TA

NPN LOW SATURATION SWITCHING TRANSISTOR

文件:365.63 Kbytes 页数:7 Pages

DIODES

美台半导体

ZXT10N20DE6TA

Package:SOT-23-6;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 20V 3.5A SOT23-6

DIODES

美台半导体

技术参数

  • Compliance(Only Automotive supports PPAP):

    Standard

  • Polarity:

    NPN

  • IC (A):

    3.5

  • ICM (A):

    19

  • PD (W):

    1.1

  • hFE (Min):

    300

  • hFE (@ IC) (A):

    0.2

  • hFE(Min 2):

    200

  • hFE (@ IC2) (A):

    2

  • VCE(sat) Max (mV):

    15

  • VCE(SAT) (@ IC/IB) (A/mA):

    0.1/10

  • VCE(sat) (Max.2) (mV):

    135

  • VCE(sat) (@ IC/IB2) (A/mA):

    2/50

  • fT (MHz):

    140

  • RCE(sat) (mΩ):

    55

  • Packages:

    SOT26

供应商型号品牌批号封装库存备注价格
ZTX
05+
原厂原装
50051
只做全新原装真实现货供应
询价
ZetexInc
24+
SOT-23-6
7500
询价
ZTX
23+
SOT23-6
13000
原装正品,假一罚十
询价
DIODES/ZETEX
23+
原厂封装
13528
振宏微原装正品,假一罚百
询价
ZETEX
20+
SOT23-6
49000
原装优势主营型号-可开原型号增税票
询价
DIODES(美台)
2447
SOT-26
105000
3000个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
DIODES
25+
SOT-23-6
3675
就找我吧!--邀您体验愉快问购元件!
询价
DIODE
24+
SOT26
9600
原装现货,优势供应,支持实单!
询价
DIODES/美台
23+
SOT236
6000
原装正品假一罚百!可开增票!
询价
DIODES
23+
SOT-163
50000
全新原装正品现货,支持订货
询价
更多ZXT10N20DE6供应商 更新时间2026-1-30 15:46:00